Chemical Bonds in Solids: Volume 4: Semiconductor Crystals, by O. G. Karpinskii, B. A. Evseev (auth.), Academician N. N.

By O. G. Karpinskii, B. A. Evseev (auth.), Academician N. N. Sirota (eds.)

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Additional resources for Chemical Bonds in Solids: Volume 4: Semiconductor Crystals, Glasses, and Liquids

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The contributions of different bonds to the melting points of covalent semicon- ductors are additive and this provides a basis for the calculations of the melting points. 2. The good agreement between the experimental data and the values calculated on the basis of the equivalent bond concept show that the equivalent bonds have indeed the same energies. 3. The validity of the additivity rule demonstrates that the main contribution to the binding energy of predominantly covalent crystals is made by the short-range forces.

5. Diffuse reflectance spectra of EuS (1) and EuSe (2) powders. A consideration of the band structure of the semiconducting monochalcogenides and pseudobinary alloys of the monochalcogenides of variable-valence rare earths enables us to conclude that the properties of the latter are determined both by the electron structure of the matrix, usually a divalent RE, and the structure of an RE dopant. The shallowest donor levels are those of La, Gd, Tb, and Lu impurities having one electron in the d state.

302. N. A. Goryunova, The Chemistry of Diamond-like Semiconductors, Chapman and Hall, London (1965). L. S. Palatnik, V. M. Koshkin, and L. P. Gal'chinetskii, Fiz. Tverd. Tela, 4:2365 (1962). V. M. Koshkin, Yu. F. D. Orlova, in: Chemical Bonds in Semiconductors and Solids (ed. by N. N. Sirota), Consultants Bureau, New York (1967), p. 239. V. M. Koshkin, Ukr. Fiz. , 9:973 (1964). L. A. Sysoev, E. K. Raiskin, and V. R. Gur'ev, Izv. Akad. Nauk SSSR, Neorg. , 3:390 (1967). A. A. Vaipolin, E. O. Osmanov, and D.

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